triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 29, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. ku band 2w packaged amplifier TGA8658-EPU-SG key features ? frequency range: 13-17 ghz ? optimized for vsat band (13.75-14.5ghz) ? 33 db nominal gain ? typical > 33.5 dbm psat in vsat band @ 7v ? bias 5-8 v @ 680 ma (quiescent) ?0.5 m m 3mi phemt technology ? integrated power detector ? 6 lead package ? package dimensions: 6.4 x 6.4 x 3.0 mm (0.3 x 0.3 x 0.1 in ) fixtured measured performance bias conditions: vd = 7 v, idq =680 ma package dimensions 6.4 x 6.4 x 3.0 mm data taken @ 14.5 ghz primary applications ?vsat ? point-to-point 18 20 22 24 26 28 30 32 34 36 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 pin (dbm) pout (dbm) & gain (db) 0 200 400 600 800 1000 1200 1400 ids (ma) gain pout ids 0 5 10 15 20 25 30 35 40 12 13 14 15 16 17 18 19 frequency (ghz) gain (db) -30 -20 -10 0 10 20 30 return loss (db) input output gain
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 29, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA8658-EPU-SG table ii rf characterization table (t a = 25 q c, nominal) (vd = 7 v, idq = 680 ma) symbol parameter test condition typical units gain small signal gain f = 13 C17 ghz 33 db irl input return loss f = 13 C17 ghz 10 db orl output return loss f = 13 C17 ghz 10 db pwr output power @ pin = +5 dbm f = 13 C15 ghz 34 dbm table i maximum ratings 1/ symbol parameter value notes vd drain supply voltage 8 v 2/ vg gate supply voltage range -5v to 0v idq drain supply current (quiescent) 1.3 a 2/ | ig | gate current 18 ma p in input continuous wave power 21 dbm 2/ p d power dissipation 5 w + (85 c- t b )/13 2/ 3 / t ch operating channel temperature 150 c 4/ 5 / t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ t b = package backside temperature in degrees c. 4/ these ratings apply to each individual fet. 5/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 29, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. measured fixtured data bias conditions: vd = 7 v, idq = 680 ma , 24 26 28 30 32 34 36 -10-8-6-4-2 0 2 4 6 810 pin (dbm) pout (dbm) 13.5 ghz 14ghz 14.5 15ghz 15.5ghz 0 5 10 15 20 25 30 35 40 12 13 14 15 16 17 18 19 frequency (ghz) gain (db) -30 -20 -10 0 10 20 30 return loss (db) input output gain TGA8658-EPU-SG
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 29, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. bias conditions: vd = 7 v, idq = 680 ma measured fixtured data 620 720 820 920 1020 1120 1220 1320 -8 -6 -4 -2 0 2 4 6 8 10 pin (dbm) ids (ma) 13.5 ghz 14ghz 14.5 15ghz 15.5ghz 20 22 24 26 28 30 32 34 36 -8 -6 -4 -2 0 2 4 6 8 10 pin (dbm) power gain (db) 13.5 ghz 14ghz 14.5 15ghz 15.5ghz TGA8658-EPU-SG
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 29, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. -50 -40 -30 -20 -10 0 10 20 10 12 14 16 18 20 22 24 26 28 30 32 output power per tone (dbm) imd3 level (dbm) 13.5ghz 14ghz 14.5ghz 15ghz bias conditions: vd = 7 v, idq = 680 ma measured fixtured data TGA8658-EPU-SG
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 29, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. 0.250 sq 0.012 typ 0.160 typ 0.060, 6 pl dimensions in inches 0.010 0.020 ref (2) 0.030 r=0.010 2 pl 0.060 typ 0.006 top view side view bias procedure 1. make sure no rf power is applied to the device before continuing. 2. pinch off device by setting v g to C1.5v. 3. raise vd to 7.0v while monitoring drain current. 4. raise v g until drain current reaches 680 ma. 5. apply rf power. packaged dimensional drawing tga8658 - sg gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA8658-EPU-SG vref rf out rf in vg vd vdet
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 29, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. power detector 40k : 40k : +5v vdet vref 50 : rf out dut 5pf tga8658 external tga8658 power detector @ 14ghz 0 0.1 0.2 0.3 0.4 0.5 0.6 0 102030405060 sqrt pout (mw^0.5) vref-vdet (v) (20 dbm) (26 dbm) (29.5 dbm) (32 dbm) (34 dbm) TGA8658-EPU-SG
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 29, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. assembly of a TGA8658-EPU-SG surface mount package onto a motherboard manual assembly for prototypes 1. clean the motherboard or the similar module with acetone. rinse with alcohol and di water. allow the circuit to fully dry. 2. to improve the thermal and rf performance, we recommend a heat sink attach to the bottom of the package and apply indium alloy sn63 solder or tin lead solder to the bottom of tga8658. 3. apply tin lead solder to each pin of tga8658. 4 clean the assembly with alcohol. high volume assembly of the package the tga8658epu is a custom leaded packaged component. high volume assembly can be performed using standard assembly processes including solder printing such as stencil solder printing. pick-and-place using a standard machine such as a mrsi machine, and solder reflow using a sikama reflow system using typical zone temperatures: 120, 175, 195, and 215 degrees celsius at 15 second intervals. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA8658-EPU-SG
|
